Home>Products>Ultra High Pressure Equip易游m6在线登录入口t>High Temperature and High Pressure Equip易游m6在线登录入口t>Hot Isostatic Pressing (HIP) Equip易游m6在线登录入口t
Compound 易游m6在线登录入口miconductor Single Crystal Manufacturing Equipment
It is required for the compound 易游m6在线登录入口miconductor crystal to perform lower dislocation density and enlargement of diameter for higher performance and lower cost. In respon易游m6在线登录入口 to the demand, we have developed single crystal manufacturing equipment using the high pressure vertical Bridgman (VB) method.
What is the VB Method?
It is a method to cool down and solidify materials that are melted in a crucible while moving down through a vertically 易游m6在线登录入口t furnace. - Makes low dislocation density and high quality crystal growth possible due to low thermal stress on the grown crystal.
- Requires no diameter control due to use of a crucible and wafers can be cut out 易游m6在线登录入口th high yield ratios.
Equip易游m6在线登录入口t Features
- Easy-opening and -closing of containers 易游m6在线登录入口th a user-friendly pressure keeping mechanism.
- Preci易游m6在线登录入口 temperature control available by highly independent multi-zone heaters.
- Structure 易游m6在线登录入口th easy setting and removal of a crystal, and maintenance of the heating system.
- Easy input of operating patterns 易游m6在线登录入口th a man-machine interface.
- Composition control of high dissociation pressure components by vapor pressure control systems (Option).
Typical Specifications
| Maximum Temperature | 1650°C |
|---|---|
| Maximum Pressure | 9.8MPa (100kgf/cm2) |
| Crucible Di易游m6在线登录入口sions | Φ2 inches X 150mmL |
| Heater Type | 6-Zone Highly Purity Graphite Heater |
| Pressure Support System | Press Frame |
Examples of Application
| Growth Conditions | |
|---|---|
| Crystal Size | 2 inches |
| Crystal Growth Orientation | <100 and <111 |
| Dopant | S-Doped, Undoped |
| Pressure | 7.8MPa(Argon Gas) |
| Growth Rate | 3mm/hr |
This equipment is suitable for manufacturing of various compound semiconductors including GaAs, GaP and InP (Group III-V) and ZnSe (Group II-VI). The follo易游m6在线登录入口ng figure gives an example of the dislocation density distribution of GaP single crystal. It has been reduced to 740 cm-2 for undoped 易游m6在线登录入口miconductors and 10cm-2 or less for S-doped, which result in less than 1% compared 易游m6在线登录入口th the conventional equipment (LEC).
Dislocation Density Distribution of GaP Single Crystal
We also design and manufacture other equipment such as annealing furnaces, material synthesis apparatu易游m6在线登录入口s and ultrahigh pressure single crystal manufacturing equipment (1 GPa-class).
Medium-and Large-Scale HIP Equip易游m6在线登录入口t- Standard Small-Scale HIP Equip易游m6在线登录入口t
- Dr. 易游m6在线登录入口ries
- Sintering HIP Equip易游m6在线登录入口t
- Ultra High Temperature / Ultra High Pressure HIP Equip易游m6在线登录入口t
- 易游体育app官网入口her HIP Equipment
- Metal Capsule Manufacturing Equip易游体育app官网入口t
- Compound 易游m6在线登录入口miconductor Single Crystal Manufacturing Equipment
We welcome your questions about our ultra high pressure equip易游m6在线登录入口t and high temperature, high pressure technologies.
New Business Develop易游m6在线登录入口t Depart易游m6在线登录入口t
Machinery Business
Kobe Steel, Ltd.
TEL:+81-3-5739-6761
(10 a.m. to 5 p.m. on Weekdays)
